emd6 / umd6n / IMD6A transistors 1/2 general purpose (dual digital transistors) emd6 / umd6n / IMD6A ! ! ! ! features 1) both the dta143t chip and dtc143t chip in an emt or umt or smt package. 2) mounting possible with emt3 or umt3 or smt3 automatic mounting machines. 3) transistor elements are independent, eliminating interference. 4) mounting cost and area can be cut in half. ! ! ! ! structure a pnp and npn digital transistor (each with a single built in resistor) the following characteristics apply to both the dtr 1 and dtr 2 , however, the ? ? ? sign on dtr 2 values for the pnp type have been omitted. ! ! ! ! equivalent circuit emd6 / umd6n IMD6A dtr 2 dtr 1 (3) (2) (1) (3) (2) (1) (4) (5) (6) (4) (5) (6) r 1 r 1 dtr 2 dtr 1 r 1 r 1 r 1 =4.7k ? r 1 =4.7k ? ! ! ! ! absolute maximum ratings (ta = 25 c) parameter symbol limits unit v cbo 50 v 50 v v v ceo v ebo 5 i c ma 100 tj 150 ?c tstg ? 55 + 150 ?c p c emd6, umd6n 150 (total) mw IMD6A 300 (total) ? 1 ? 2 collector-base voltage collector-emitter voltage emitter-base voltage collector current junction temperature storage temperature collector power dissipation ? 1 120mw per element must not be exceeded. ? 2 200mw per element must not be exceeded. ! ! ! ! external dimensions (units : mm) rohm : emt6 emd6 rohm : umt6 eiaj : sc-88 emd6n abbreviated symbol : d6 abbreviated symbol : d6 abbreviated symbol : d6 rohm : smt6 eiaj : sc-74 IMD6A each lead has same dimensions each lead has same dimensions each lead has same dimensions 0to0.1 ( 6 ) 2.0 1.3 0.9 0.15 0.7 0.1min. 2.1 0.65 0.2 1.25 ( 1 ) 0.65 ( 4 ) ( 3 ) ( 2 ) ( 5 ) ( 6 ) ( 5 ) ( 4 ) 0.3to0.6 0.15 0.3 1.1 0.8 0to0.1 ( 3 ) 2.8 1.6 1.9 2.9 0.95 ( 2 ) 0.95 ( 1 ) 0.22 1.2 1.6 ( 1 ) ( 2 ) ( 5 ) ( 3 ) ( 6 ) ( 4 ) 0.13 0.5 0.5 0.5 1.0 1.6
emd6 / umd6n / IMD6A transistors 2/2 ! ! ! ! electrical characteristics (ta = 25 c) parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce (sat) r 1 min. 50 50 5 ? ? 100 ? 3.29 ? ? ? ? ? 250 ? 4.7 ? ? ? 0.5 0.5 600 0.3 6.11 vi c = 50 a i c = 1ma i e = 50 a v cb = 50v v eb = 4v v ce = 5v, i c = 1ma ? i c /i b = 5ma/0.25ma v v a a ? v k ? typ. max. unit conditions f t ? 250 ? v ce = 10ma, i e = ? 5ma, f = 100mhz mhz ? transition frequency of the transistor ? collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio transition frequency collector-emitter saturation voltage input resistance ! ! ! ! packaging specifications package code tr t108 3000 3000 taping basic ordering unit (pieces) umd6n t2r 8000 emd6 IMD6A type ! ! ! ! electrical characteristic curves dtr 1 (npn) dc current gain : h fe collector current : i c (a) v ce = 5v 100 200 500 1m 2m 5m 10m 20m 50m100m 1k 500 200 100 50 20 10 5 2 1 ta=100 ? c 25 ? c ? 40 ? c fig.1 dc current gain vs. collector current 100 200 500 1m 2m 5m 10m 20m 50m 100m 1 500m 200m 100m 50m 20m 10m 5m 2m 1m collector saturation voltage : v ce (sat) ( v) collector current : i c (a) ta=100 ? c 25 ? c ? 40 ? c l c /l b =20 fig.2 collector-emitter saturation voltage vs. collector current dtr 2 (pnp) v ce = ? 5v ? 100 ? 1m ? 10m ? 200 ? 2m ? 20m ? 500 ? 5m ? 50m ? 100m 1k 500 200 100 50 20 10 5 2 1 dc current gain : h fe collector current : i c (a) ? 40 ? c 25 ? c ta=100 ? c fig.3 dc current gain vs. collector current l c /l b =20 ? 500m ? 200m ? 100m ? 50m ? 20m ? 10m ? 5m ? 2m ? 1m ? 1 ? 100 ? 1m ? 10m ? 200 ? 2m ? 20m ? 500 ? 5m ? 50m ? 100m collector saturation voltage : v ce (sat) ( v) collector current : i c (a) ta=100 ? c 25 ? c ? 40 ? c fig.4 collector-emitter saturation voltage vs. collector current
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